N-channel Enhanced VDMOSFETs

文件：427.84 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- VDSS: 1500V(Min) ·Static Drain-Source On-Resistance RDS(on):

文件：299.71 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

文件：155.58 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：371.65 Kbytes 页数：2 Pages

ISC

无锡固电