N-Channel Enhancement Mode MOSFET

文件：1.22315 Mbytes 页数：4 Pages

HMSEMI

华之美半导体

HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed

文件：412.48 Kbytes 页数：11 Pages

IRF

P CHANNEL MOS SILICON TRANSISTOR

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

文件：42.33 Kbytes 页数：4 Pages

SANYO

三洋

TRIPLE PROCESSOR SUPERVISORS

文件：430.53 Kbytes 页数：14 Pages

TI

德州仪器