IXFQ20N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXTH20N50D

HighVoltageMOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features •NormallyONMode •Internationalstandardpackages •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •Levelshifting •Triggers •SolidStateRelays •CurrentRegulators •Activeload

IXTT20N50D

HighVoltageMOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features •NormallyONMode •Internationalstandardpackages •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •Levelshifting •Triggers •SolidStateRelays •CurrentRegulators •Activeload

JMP20N50A

MSF20N50

N-ChannelEnhancementModePowerMOSFET

MSW20N50

500VN-ChannelMOSFET

MTV20N50E

PowerFieldEffectTransistor

MTV20N50E

TMOSPOWERFET20AMPERES500VOLTSRDS(on)=0.240OHM

TMOSE−FETPowerFieldEffectTransistorD3PAKforSurfaceMount N−ChannelEnhancement−ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresurfa

MTV20N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.24Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTW20N50E

TMOSPOWERFET20AMPERES500VOLTSRDS(on)=0.24OHM

TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N−ChannelEnhancement−ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO