丝印：HM1404D；Package：TO-263-2L；N-Channel Enhancement Mode Power MOSFET

DESCRIPTION The HM1404D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS = 40V,ID =200A RDS(ON)

文件：615.47 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM1404D；Package：TO-263-2L；N-Channel Enhancement Mode Power MOSFET

DESCRIPTION The HM1404D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS = 40V,ID =200A RDS(ON)

文件：615.47 Kbytes 页数：7 Pages

HMSEMI

华之美半导体