丝印：HM4264；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The HM4264 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features ● VDS = 60V,ID =12A RDS(ON)

文件：529.64 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM4264B；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 50V,ID =15A RDS(ON)

文件：695.51 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM4264；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The HM4264 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features ● VDS = 60V,ID =12A RDS(ON)

文件：529.64 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM4264B；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 50V,ID =15A RDS(ON)

文件：695.51 Kbytes 页数：7 Pages

HMSEMI

华之美半导体