丝印：HM1404C；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

DESCRIPTION The HM1404& uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS = 40V,ID =170A RDS(ON)

文件：507.76 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM1404C；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

DESCRIPTION The HM1404& uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS = 40V,ID =170A RDS(ON)

文件：507.76 Kbytes 页数：7 Pages

HMSEMI

华之美半导体