RXH100N03

4VDriveNchMOSFET

4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Switching

STD100N03L

N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET

Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore

SW100N03

N-channelMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON)

SWB100N03

N-channelMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON)

SWD100N03

N-channelMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON)

SWI100N03

N-Channel30-V(D-S)MOSFET

SWI100N03

N-channelMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON)

SWP100N03

N-channelMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON)

TF100N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features 30V,100A RDSON(typ)=2.9mΩ@VGS=10V RDSON(typ)=4.3mΩ@VGS=4.5V AdvancedTrenchTechnology ProvideExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired Application LoadSwitch PWMApplication Powermanagement 100UISTESTED! 100ΔVdsTEST

TF100N03M

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF100N03MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching