Type HM14H1 Load Cell Mounting Kit

Short Description • Nickel plated alloy steel IP68 column load cell • Hermetically sealed • Robust and smart design without semi-conductors • High accuracy • Set contains HM14H1 Load cell with HY-14-146-W1 mounting assembly

文件：494.28 Kbytes 页数：4 Pages

ZEMIC

泽米克

Low EMI Oscillator 14 pin Dual-in-Line

DESCRIPTION EQHM14 series low EMI oscillators can reduce system EMI by 15dB. The oscillators are a ‘drop-in’ replacement for standard oscillators. EMI reduction is achieved by the use of Spread Spectrum Technology whereby the mode energy is spread over a wider bandwidth. The modulation carrier fr

文件：267.61 Kbytes 页数：2 Pages

EUROQUARTZ

石英公司

4096 x 1 CMOS RAM

Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max • Low Power O

文件：167.86 Kbytes 页数：10 Pages

Intersil

4096 x 1 CMOS RAM

Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max • Low Power O

文件：167.86 Kbytes 页数：10 Pages

Intersil

4096 x 1 CMOS RAM

Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max • Low Power O

文件：167.86 Kbytes 页数：10 Pages

Intersil

4096 x 1 CMOS RAM

Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max • Low Power O

文件：167.86 Kbytes 页数：10 Pages

Intersil

4096 x 1 CMOS RAM

Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max • Low Power O

文件：167.86 Kbytes 页数：10 Pages

Intersil

4096 x 1 CMOS RAM

Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max • Low Power O

文件：167.86 Kbytes 页数：10 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：234.23 Kbytes 页数：9 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：234.23 Kbytes 页数：9 Pages

Intersil