2K x 8 CMOS RAM

Features • Low Power Standby. . . . . . . . . . . . . . . . . . . 275μW Max • Low Power Operation . . . . . . . . . . . . . .55mW/MHz Max • Fast Access Time . . . . . . . . . . . . . . . . . 120/200ns Max • Industry Standard Pinout • Single Supply . . . . . . . . . . . . . . . . . . . . . . .

文件：84.26 Kbytes 页数：6 Pages

RENESAS

瑞萨

2K x 8 CMOS RAM

Description The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, whic

文件：201.09 Kbytes 页数：8 Pages

Intersil

2K x 8 CMOS RAM

Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, which

文件：31.93 Kbytes 页数：6 Pages

Intersil

2K x 8 CMOS RAM

Features • Low Power Standby. . . . . . . . . . . . . . . . . . . 275μW Max • Low Power Operation . . . . . . . . . . . . . .55mW/MHz Max • Fast Access Time . . . . . . . . . . . . . . . . . 120/200ns Max • Industry Standard Pinout • Single Supply . . . . . . . . . . . . . . . . . . . . . . .

文件：84.26 Kbytes 页数：6 Pages

RENESAS

瑞萨

2K x 8 CMOS RAM

Description The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, whic

文件：201.09 Kbytes 页数：8 Pages

Intersil

2K x 8 CMOS RAM

Description The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, whic

文件：201.09 Kbytes 页数：8 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：220.99 Kbytes 页数：9 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：220.99 Kbytes 页数：9 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：220.99 Kbytes 页数：9 Pages

Intersil

16K x 1 Asynchronous CMOS Static RAM

Description The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle times and ease of use. The HM-65262/883 is available in both JEDEC Standard 20 pin, 0.300 inch w

文件：177.42 Kbytes 页数：10 Pages

Intersil