1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：234.23 Kbytes 页数：9 Pages

INTERSIL

1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：234.23 Kbytes 页数：9 Pages

INTERSIL

1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：234.23 Kbytes 页数：9 Pages

INTERSIL

1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：234.23 Kbytes 页数：9 Pages

INTERSIL