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IP123

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES •0.04/VLINEREGULATION •0.3/ALOADREGULATION •THERMALOVERLOADPROTECTION •SHORTCIRCUITPROTECTION •SAFEOPERATINGAREAPROTECTION •1TOLERANCE •START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT •AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IP123A

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES •0.04/VLINEREGULATION •0.3/ALOADREGULATION •THERMALOVERLOADPROTECTION •SHORTCIRCUITPROTECTION •SAFEOPERATINGAREAPROTECTION •1TOLERANCE •START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT •AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IPM-C123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪讯

IPM-L123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪讯

IRF123

8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF123

N-CHANNELPOWERMOSFETS

FEATURES •LowRDs

SamsungSamsung semiconductor

三星三星半导体

IRF123

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF123

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

详细参数

  • 型号:

    HLB123D

  • 制造商:

    HSMC

  • 制造商全称:

    HSMC

  • 功能描述:

    NPN EPITAXIAL PLANAR TRANSISTOR

供应商型号品牌批号封装库存备注价格
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
华晰
6000
面议
19
DIP
询价
HI-SINCERITY
2022+
250
全新原装 货期两周
询价
华昕
23+
8
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HITACHI
2025+
TO-251
4835
全新原厂原装产品、公司现货销售
询价
FAIRCHILD/仙童
23+
TO-263(D
69820
终端可以免费供样,支持BOM配单!
询价
HSMC
22+
TO-251
20000
保证原装正品,假一陪十
询价
HSMC
24+
TO-251
89000
特价特价100原装长期供货.
询价
HIS
25+
NA
880000
明嘉莱只做原装正品现货
询价
UTC
2023+环保现货
TO220
50000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
更多HLB123D供应商 更新时间2025-7-15 18:04:00