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首页>HGTG20N60A4D>芯片详情
HGTG20N60A4D_ONSEMI/安森美半导体_IGBT 晶体管 600V向鸿伟业电子
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产品属性
- 类型
描述
- 型号:
HGTG20N60A4D
- 功能描述:
IGBT 晶体管 600V
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集电极—发射极最大电压
- VCEO:
650 V
- 集电极—射极饱和电压:
2.3 V
- 栅极/发射极最大电压:
20 V 在25
- C的连续集电极电流:
150 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
187 W
- 封装/箱体:
TO-247
- 封装:
Tube
供应商
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