| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>HGT1S20N60C3S9A>芯片详情
HGT1S20N60C3S9A_ONSEMI/安森美半导体_IGBT 晶体管 45a 600V N-Ch IGBT UFS Series芯皇电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
HGT1S20N60C3S9A
- 功能描述:
IGBT 晶体管 45a 600V N-Ch IGBT UFS Series
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集电极—发射极最大电压
- VCEO:
650 V
- 集电极—射极饱和电压:
2.3 V
- 栅极/发射极最大电压:
20 V 在25
- C的连续集电极电流:
150 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
187 W
- 封装/箱体:
TO-247
- 封装:
Tube
相近型号
- HGTD10N40F1
- HGT1H016HTO
- HGTD10N40F1S
- HGR2M
- HGTD10N50F1
- HGQ065NE4A
- HGTD10N50F1S
- HGQ018N03A
- HGTD1N120BNS9A
- HGQ014N04B-G
- HGTG10N120BND
- HGQ011N03A-G
- HGTG11N120CND
- HGPFPT001
- HGTG12N60A4D
- HGP210N20S
- HGTG18N120BN
- HGP-12A
- HGTG18N120BND
- HGP018N04A
- HGTG20N100D2
- HGLXP610SE
- HGTG20N120
- HGLXP604SE
- HGTG20N120CND
- HGLD808-200
- HGTG20N120E2
- HGTG20N60A4
- HGK3FF152MA3BW
- HGTG20N60A4D
- HGTG20N60B3
- HGTG20N60B3D
- HGTG20N60C3
- HGJM51111T00
- HGTG20N60C3D
- HGG05006
- HGTG24N60D1D
- HGE24005
- HGDFPT061B
- HGTG27N120BN
- HGDEST021B
- HGDESM021A
- HGTG30N60A4
- HGDESM013A
- HGTG30N60A4D
- HGDEPT021B
- HGTG30N60B3
- HGD1K2N20ML
- HGTG30N60B3D
- HGD120N06SL



