丝印：GS090N06SL；Package：SOIC-8；60V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching,Logic level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Te

文件：927.61 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体

60V SGT

Hunteck

恒泰柯半导体

Single N-Channel Enhancement Mode MOSFET

Feature Pin Description  60V/60A RDS(ON)= 7.7 mΩ(typ.)@VGS = 10V RDS(ON)= 11.8 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool A

文件：923.96 Kbytes 页数：9 Pages

CHIPSOURCETEK

矽源特科技

N-Channel Enhancement Mode Power MOSFET

Description The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：692.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT090N06MH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.07666 Mbytes 页数：6 Pages

GOFORD

谷峰半导体