HFW7N80规格书应用电路库存现货第2页-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
I7N80	文件：899.86 Kbytes Page：11 Pages	7A800VN-channelEnhancementModePowerMOSFET	WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司	WXDH
IXFA7N80P	文件：260.55 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Corporation	IXYS
IXFA7N80P	文件：333.43 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFA7N80P	文件：146.22 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity	IXYS IXYS Corporation	IXYS
IXFA7N80P	文件：152.81 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicRectifier ●LowQG Applications ●DC-DCConverters ●BatteryChargers ●Switch-ModeandResonant-ModePowerSupplies	IXYS IXYS Corporation	IXYS
IXFH7N80	文件：78.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive	IXYS IXYS Corporation	IXYS
IXFH7N80	文件：372.57 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFI7N80P	文件：146.22 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity	IXYS IXYS Corporation	IXYS
IXFI7N80P	文件：327.02 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFM7N80	文件：78.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive	IXYS IXYS Corporation	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市阅创想科技有限公司	HFW7R-1STAE1H1LF	Amphenol/安费诺	24+		36017	原厂现货渠道	询价
深圳市纳立科技有限公司	HFW7R-1STE1LF		三年内		1983	只做原装正品	询价
深圳市河锋鑫科技有限公司	HFW7R-1STE1LF	AFCI	2018+		12500		询价
深圳市鑫炜纳电子有限公司	HFW7R-1STE1LF	AFCI	2022+		12500	原厂原装,假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	HFW7R-1STE1LF	AFCI	23+		739764	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
广州市睿科电子科技有限公司	HFW7R-1STE1LF	AFCI	21+		456	只做原装,优势渠道 ,欢迎实单联系	询价
深圳市科恒伟业电子有限公司	HFW7R-1STE1LF	AFCI	2450+		8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市赛美科科技有限公司	HFW7R-1STE1LF其他被动元件	FCI		NA	275000	一级代理原装正品,价格优势,长期供应!	询价
深圳市英瑞尔电子科技有限公司	HFW7R-2STAE1HLF	FCI	24+	SMD	598000	原装现货假一赔十	询价
深圳市骏创达科技有限公司	HFW7R-2STAE1HLF	AMPHENOL/安费诺	2508+	/	233927	一级代理，原装现货	询价

更多HFW7N80供应商更新时间2025-7-16 15:31:00

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