IXFH18N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXZR18N50

Z-MOSRFPowerMOSFET

IXZR18N50A

Z-MOSRFPowerMOSFET

IXZR18N50B

Z-MOSRFPowerMOSFET

JCS18N50FH

N-CHANNELMOSFET

JCS18N50FH-O-F-N-B

N-CHANNELMOSFET

JCS18N50FH-R-F-N-B

N-CHANNELMOSFET

JCS18N50WH

N-CHANNELMOSFET

JCS18N50WH-O-W-N-B

N-CHANNELMOSFET

JMP18N50A

KIA18N50HF

商品目录MOS(场效应管) 连续漏极电流（Id）（25°C时）18A(Tc) 漏源电压（Vdss）500V 栅源极阈值电压5V@250uA 漏源导通电阻320mΩ@9A,10V 类型N沟道 最大功率耗散（Ta）38.5W(Tc)

MDF18N50

N-ChannelMOSFET500V,18A,0.27(ohm)

MDF18N50B

N-ChannelMOSFET500V,18.0A,0.27(ohm)

MDF18N50BTH

N-ChannelMOSFET500V,18.0A,0.27(ohm)

MDF18N50TH

N-ChannelMOSFET500V,18A,0.27(ohm)

MDP18N50

N-ChannelMOSFET500V,18.0A,0.27(ohm)

MDP18N50B

N-ChannelMOSFET500V,18.0A,0.27(ohm)

MDP18N50BTH

N-ChannelMOSFET500V,18.0A,0.27(ohm)

MDP18N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDP18N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D