N 650V 2A MOS TO-220F

The Power MOSFET is fabricated using the advanced planer VDMOS technology. The resulting\ndevice has low conduction resistance, superior switching performance and high avalanche energy • Low RDS(on)\n• 100% UIS tested\n• RoHS compliant;

HeifengTech

黑锋科技

650VN-ChannelMOSFETs

直插 N 通道 650V 20A 45W •650V,20A,RDS(ON)=0.350@Ves=10V\r\n•Improved dv/dt capability\r\n•Fast switching\r\n•100% EAS Guaranteed\r\n•Green DeviceAvailable\r;

HOEN

宏盈

the silicon N-channel Enhanced VDMOSFETs

文件：875.53 Kbytes 页数：10 Pages

HMSEMI

华之美半导体

High Efficiency for Motor Control.

文件：1.10334 Mbytes 页数：8 Pages

HMSEMI

华之美半导体

650V N-Channel Planar MOSFET

Features RDSON≤0.42Ω @Vgs=10V, Id=10A Ultra Low gate Charge(typical 73nC) Low Crss (typical 12pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) (P

文件：2.57068 Mbytes 页数：11 Pages

SY

顺烨电子