首页 >HDE330BDKR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LongDistanceDigitalDisplayLinkTransmitter&Receiver [InovaSemiconductors] GeneralDescription TheGigaSTaR®DigitalDisplayLinkisahigh-speedserialandlongdistancelinkforvideo,audioanddigitaldata,whichsupportsthepopularVESAstandardbutalsoproprietaryvideoformatsfromVGAtoUXGAwithcolordepthupto24bits. Features: | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
LongDistanceDigitalDisplayLinkTransmitter&Receiver [InovaSemiconductors] GeneralDescription TheGigaSTaR®DigitalDisplayLinkisahigh-speedserialandlongdistancelinkforvideo,audioanddigitaldata,whichsupportsthepopularVESAstandardbutalsoproprietaryvideoformatsfromVGAtoUXGAwithcolordepthupto24bits. Features: | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
LongDistanceDigitalDisplayLinkTransmitter&Receiver [InovaSemiconductors] GeneralDescription TheGigaSTaR®DigitalDisplayLinkisahigh-speedserialandlongdistancelinkforvideo,audioanddigitaldata,whichsupportsthepopularVESAstandardbutalsoproprietaryvideoformatsfromVGAtoUXGAwithcolordepthupto24bits. Features: | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
N-CHANNELPOWERMOSFETS FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio | IRF International Rectifier | IRF | ||
5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •DrainCurrentID=5.5A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •FastSwitchingSpeed APPLICATIONS •Highvoltage,highspeedapplications •Off-lineswitchingpowersupplies,UPS,ACandDC motorco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
详细参数
- 型号：
HDE330BDKR
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Ceramic High Voltage Disc Capacitors, Class 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY(威世) |
24+ |
插件,P=12.5mm |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
VISHAY SPECIALTY CAPACITORS |
23+ |
原厂原封 |
7500 |
订货1周 原装正品 |
询价 | ||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Smiths |
24+ |
原装原封 |
25000 |
##公司100%原装现货,假一罚十!可含税13%免费提供样品支持 |
询价 | ||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
询价 | |||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
询价 | |||
HITACHI |
13+ |
1268 |
原装分销 |
询价 | |||
HIROSE/广濑 |
2508+ |
/ |
320680 |
一级代理，原装现货 |
询价 | ||
Hirose |
2022+ |
connector |
60000 |
专注军用/航空连接器,十五年优质供应商! |
询价 | ||
Hirose |
2021+ |
公插 |
285000 |
专供连接器,军工合格供应商! |
询价 |
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