8-input NAND Gates

Features • High Speed Operation: tpd = 11 ns typ (CL = 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 1 µA max (Ta = 25°C)

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瑞萨

8 INPUT NAND GATE

DESCRIPTION The M54/74HC30 is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10

文件：234.2 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

8-INPUT NAND GATE

DESCRIPTION The M54/74HC30 is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10

文件：164.57 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

8-INPUT NAND GATE

文件：229.51 Kbytes 页数：6 Pages

TOSHIBA

东芝