首页 >HCTS540KMSR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFETPOWERMOSFET ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. 1.Dynamicdv/dtRating 2.RepetitiveAvalancheRated 3.175°COperatingTemperature | IRF International Rectifier | IRF | ||
N-CHANNEL100V-0.055廓-22ATO-220LOWGATECHARGESTripFET??IIPOWERMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelPowerMOSFET ID(A)28 VDSS(V)100 RDS(ON)(Ω)0.077@VGS=10V QG(nC)max.72 DESCRIPTION TheNellIRF540areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofop | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | NELLSEMI | ||
N-ChannelPowerMOSFETs,27A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
25Aand28A,80Vand100V,0.077and0.100Ohm,N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMosfetTransistor DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET(100V/27A) GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack | FS First Silicon Co., Ltd | FS |
详细参数
- 型号：
HCTS540KMSR
- 制造商：
Intersil Corporation
- 功能描述：
RADHARD INVERTG OCTAL BUFFR/LINE DRIVR,3-ST,FP,200K,TTL,V - Bulk
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas Electronics America In |
25+ |
8-SOIC(0.154 3.90mm 宽) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
H |
24+ |
CDIP |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
询价 | ||
24+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
询价 | |||
INTERSIL |
15+ |
原厂封装 |
13 |
宇航IC只做原装假一罚十 |
询价 | ||
INTERSIL |
24+ |
N/A |
90000 |
原厂正规渠道现货、保证原装正品价格合理 |
询价 | ||
INTERSIL |
24+ |
12 |
全新原装 |
询价 | |||
INTERSIL |
2015+ |
132 |
原装正品 |
询价 | |||
INTERSIL |
18+ |
原厂原装假一赔十 |
13 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
询价 | ||
INTERSIL |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
H |
QQ咨询 |
CDIP |
68 |
全新原装 研究所指定供货商 |
询价 |
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