Radiation Hardened 8-Input NAND Gate

Description The Intersil HCTS30MS is a Radiation Hardened 8-Input NAND Gate. A high on all input forces the output to a low state. The HCTS30MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

文件：134.18 Kbytes 页数：10 Pages

Intersil

Radiation Hardened 8-Input NAND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件：391.29 Kbytes 页数：9 Pages

RENESAS

瑞萨

Radiation Hardened 8-Input NAND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件：391.29 Kbytes 页数：9 Pages

RENESAS

瑞萨

Radiation Hardened 8-Input NAND Gate

Description The Intersil HCTS30MS is a Radiation Hardened 8-Input NAND Gate. A high on all input forces the output to a low state. The HCTS30MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

文件：134.18 Kbytes 页数：10 Pages

Intersil

Radiation Hardened 8-Input NAND Gate

Renesas

瑞萨