Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Description The Intersil HCTS574MS is a Radiation Hardened non-inverting octal D-type, positive edge triggered flip-flop with three-stateable outputs. The HCTS574MS utilizes advanced CMOS/SOS technology. The eight flip-flops enter data into their registers on the LOW-to-HIGH transition of the clo

文件：135.08 Kbytes 页数：11 Pages

Intersil

Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件：430.6 Kbytes 页数：10 Pages

RENESAS

瑞萨

Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件：580.01 Kbytes 页数：10 Pages

RENESAS

瑞萨

Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Description The Intersil HCTS574MS is a Radiation Hardened non-inverting octal D-type, positive edge triggered flip-flop with three-stateable outputs. The HCTS574MS utilizes advanced CMOS/SOS technology. The eight flip-flops enter data into their registers on the LOW-to-HIGH transition of the clo

文件：135.08 Kbytes 页数：11 Pages

Intersil

Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件：430.6 Kbytes 页数：10 Pages

RENESAS

瑞萨

Medium Power Amplier

文件：83.29 Kbytes 页数：1 Pages

BOWEI

博威集成电路