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HCTS574D

Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件:430.6 Kbytes 页数:10 Pages

RENESAS

瑞萨

HCTS574D

Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件:580.01 Kbytes 页数:10 Pages

RENESAS

瑞萨

HCTS574D

Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Description The Intersil HCTS574MS is a Radiation Hardened non-inverting octal D-type, positive edge triggered flip-flop with three-stateable outputs. The HCTS574MS utilizes advanced CMOS/SOS technology. The eight flip-flops enter data into their registers on the LOW-to-HIGH transition of the clo

文件:135.08 Kbytes 页数:11 Pages

Intersil

HCTS574DMSR

Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Description The Intersil HCTS574MS is a Radiation Hardened non-inverting octal D-type, positive edge triggered flip-flop with three-stateable outputs. The HCTS574MS utilizes advanced CMOS/SOS technology. The eight flip-flops enter data into their registers on the LOW-to-HIGH transition of the clo

文件:135.08 Kbytes 页数:11 Pages

Intersil

HCTS574DMSR

Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件:430.6 Kbytes 页数:10 Pages

RENESAS

瑞萨

HCTS574DMSR

Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件:580.01 Kbytes 页数:10 Pages

RENESAS

瑞萨

详细参数

  • 型号:

    HCTS574D

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered

供应商型号品牌批号封装库存备注价格
H
24+
CDIP
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
询价
24+
长期备有现货
500000
行业低价,代理渠道
询价
INTERSIL
15+
原厂封装
13
宇航IC只做原装假一罚十
询价
INTERSIL
24+
N/A
90000
原厂正规渠道现货、保证原装正品价格合理
询价
INTERSIL
24+
12
全新原装
询价
INTERSIL
2015+
132
原装正品
询价
INTERSIL
18+
原厂原装假一赔十
13
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔
询价
INTERSIL
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
H
QQ咨询
CDIP
68
全新原装 研究所指定供货商
询价
H
2318+
CDIP
4862
只做进口原装!假一赔百!自己库存价优!
询价
更多HCTS574D供应商 更新时间2025-10-9 15:00:00