IRFP360

MegaMOSFET

Features •Fastswitchingtimes •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutingdv/dtrating Applications •DCchoppers •MotorControls •Switch-modeandresonant-mode •Uninterruptablepowersupplies(UPS) Adva

IRFP360

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=23A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) •FastSwitching DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications.

IRFP360

Avalanche-Energy-RatedN-ChannelPowerMOSFETs

TheIRFP360andIRFP362areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperationThesearen-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingre

IRFP360

PowerMOSFET

IRFP360

PowerMOSFET

FEATURES •DynamicdV/dtrated •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfo

IRFP360LC

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRFP360LC

PowerMOSFET

IRFP360LC

PowerMOSFET

IRFP360LC

iscN-ChannelMOSFETTransistor

IRFP360LC

PowerMOSFET