丝印：HCS132；Package：SOT-23-THIN；SNx4HC132 Quadruple 2-Input NAND Gates with Schmitt-Trigger Inputs

1 Features • Buffered inputs • Wide operating temperature range: –40°C to +85°C • Supports fanout up to 10 LSTTL loads • Significant power reduction compared to LSTTL logic ICs 2 Applications • Alarm / tamper detect circuit • S-R latch 3 Description This device contains four indepen

文件：2.45812 Mbytes 页数：42 Pages

TI

德州仪器

Radiation Hardened Quad 2-Input NAND Schmitt Trigger

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cos

文件：368.24 Kbytes 页数：8 Pages

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Radiation Hardened Quad 2-Input NAND Schmitt Trigger

Description The Intersil HCS132MS is a Radiation Hardened Quad 2-Input NAND Schmitt Trigger inputs. A high on both inputs forces the output to a Low state. The HCS132MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-spee

文件：156.86 Kbytes 页数：8 Pages

INTERSIL

Radiation Hardened Quad 2-Input NAND Schmitt Trigger

Description The Intersil HCS132MS is a Radiation Hardened Quad 2-Input NAND Schmitt Trigger inputs. A high on both inputs forces the output to a Low state. The HCS132MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-spee

文件：156.86 Kbytes 页数：8 Pages

INTERSIL

Radiation Hardened Quad 2-Input NAND Schmitt Trigger

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cos

文件：368.24 Kbytes 页数：8 Pages

RENESAS

瑞萨

Radiation Hardened Quad 2-Input NAND Schmitt Trigger

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cos

文件：368.24 Kbytes 页数：8 Pages

RENESAS

瑞萨

Radiation Hardened Quad 2-Input NAND Schmitt Trigger

Description The Intersil HCS132MS is a Radiation Hardened Quad 2-Input NAND Schmitt Trigger inputs. A high on both inputs forces the output to a Low state. The HCS132MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-spee

文件：156.86 Kbytes 页数：8 Pages

INTERSIL

Radiation Hardened Quad 2-Input NAND Schmitt Trigger

Description The Intersil HCS132MS is a Radiation Hardened Quad 2-Input NAND Schmitt Trigger inputs. A high on both inputs forces the output to a Low state. The HCS132MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-spee

文件：156.86 Kbytes 页数：8 Pages

INTERSIL

Radiation Hardened Quad 2-Input NAND Schmitt Trigger

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cos

文件：368.24 Kbytes 页数：8 Pages

RENESAS

瑞萨

Radiation Hardened Quad 2-Input NAND Schmitt Trigger

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cos

文件：368.24 Kbytes 页数：8 Pages

RENESAS

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