HCS132D中文资料瑞萨数据手册PDF规格书

特性 Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm2/mg

• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/

Bit-Day (Typ)

• Dose Rate Survivability: >1 x 1012 RAD (Si)/s

• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse

• Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day

(Typ

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55oC to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30 of VCC Max

- VIH = 70 of VCC Min

• Input Current Levels Ii  5A at VOL, VOH