型号：SN74HCS05DYYR；Package：SOT-23-THIN；SNx4HC05 Hex Inverters with Open-Drain Outputs

1 Features • Buffered inputs • Wide operating voltage range: 2 V to 6 V • Wide operating temperature range: –40°C to +85°C • Supports fanout up to 10 LSTTL loads • Significant power reduction compared to LSTTL logic ICs 2 Applications • Synchronize inverted clock inputs • Invert a digi

文件：2.27606 Mbytes 页数：36 Pages

TI

德州仪器

型号：SN74HCS05DR；Package：SOIC；SN74HCS05 Hex Inverter with Open-Drain Outputs and Schmitt-Trigger Inputs

文件：276.36 Kbytes 页数：15 Pages

TI1

德州仪器

型号：SN74HCS05PWR；Package：TSSOP；SN74HCS05 Hex Inverter with Open-Drain Outputs and Schmitt-Trigger Inputs

文件：276.36 Kbytes 页数：15 Pages

TI1

德州仪器

型号：SN74HCS05QDRQ1；Package：SOIC；SN74HCS05-Q1 Automotive Hex Inverter with Open-Drain Outputs and Schmitt-Trigger Inputs

文件：276.9 Kbytes 页数：15 Pages

TI1

德州仪器

型号：SN74HCS05QPWRQ1；Package：TSSOP；SN74HCS05-Q1 Automotive Hex Inverter with Open-Drain Outputs and Schmitt-Trigger Inputs

文件：276.9 Kbytes 页数：15 Pages

TI1

德州仪器

型号：HCS05D；Radiation Hardened Hex Inverter with Open Drain

Description The Intersil HCS05MS is a Radiation Hardened Hex inverter function with open drain outputs. These open drain outputs can drive into resistive loads with a separate voltage supply. The HCS05MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a memb

文件：107.1 Kbytes 页数：7 Pages

Intersil

型号：HCS05D；Radiation Hardened Triple 3-Input NAND Gate

Description The Intersil HCS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic F

文件：181.78 Kbytes 页数：8 Pages

Intersil

型号：HCS05D；Radiation Hardened Triple 3-Input NAND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse • Cos

文件：389.34 Kbytes 页数：8 Pages

RENESAS

瑞萨

型号：HCS05D；Radiation Hardened Hex Inverter with Open Drain

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件：316.81 Kbytes 页数：7 Pages

RENESAS

瑞萨

型号：HCS05DMSR；Radiation Hardened Hex Inverter with Open Drain

Description The Intersil HCS05MS is a Radiation Hardened Hex inverter function with open drain outputs. These open drain outputs can drive into resistive loads with a separate voltage supply. The HCS05MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a memb

文件：107.1 Kbytes 页数：7 Pages

Intersil