ILX520K

7078X3pixelCCDLinearSensor(Color)

Description TheILX520KisareductiontypeCCDlinearsensordevelopingforcolorimagescanner.ThissensorreadsA3-sizedocumentsatadensityof600DPI. Features •Numberofeffectivepixels:21234pixels(7078pixels×3) •Pixelsize:8µm×8µm(8µmpitch) •Distancebetweenline:64µ

IMB520R

ATXMotherboardwithLGA1151Socket9th/8thGenIntel®Core™Processor,Intel®Q370,USB3.2Gen1/Gen2,SATA3.0,DualLAN,VGA,DisplayPort,DVI-D,andHDMI

Features ●LGA1151socket9th/8thgenIntel®Core™i7/i5/i3,Pentium®&Celeron®processor(CoffeeLakeRefresh) ●Four288-pinDDR4-2666/2400DIMMforupto128GBofmemory ●VGA,DisplayPort++,DVI-DandHDMIwithtriple-viewsupported ●4SATA-600withRAID0/1/5/10 ●TwoUSB3.2Gen2x1(1

INDIGO520

Indigo520Transmitter

Features Supports2detachable measurementdevices simultaneously Dataloggingofallmeasurement parameters IP66andNEMA4ratedmetal enclosure 4configurablegalvanically isolatedanalogoutputs 2-wirecurrentloopanaloginput 2relays Ethernetconnectionwithweb interfaceforr

IRF520

N-CHANNELENHANCEMENTMODEVERTICALDMOSPOWERFETs

N-CHANNELENHANCEMENTMODEVERTICALDMOSPOWERFETs Applications □Motorcontrol □Converters □Amplifiers □Switches □Powersupplycircuits □Drivers(Relays,Hammers,Solenoides,Lamps,Memeories,Displays,BipolarTransistors,etc.)

IRF520

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE

IRF520

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

IRF520

9.2A,100V,0.270Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfield effecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRF520

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

IRF520

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

IRF520

N-ChannelMOSFETTransistor

•DESCRITION •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequire