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BCR135W

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuitdrivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCR135W

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit)

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47KΩ)

SIEMENS

Siemens Ltd

BCR135W

NPNSiliconDigitalTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BD135

EPITAXIALPLANARNPNTRANSISTOR

GENERALPURPOSEAPPLICATION. FEATURES •HighCurrent.(Max.:1.5A) •LowVoltage(Max.:45V) •DCCurrentGain:hFE=40Min.@IC=0.15A •ComplementarytoBD136.

KECKEC CORPORATION

KEC株式会社

BD135

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD136/138/140 APPLICATIONS •Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits

SAVANTIC

Savantic, Inc.

BD135

NPNSILICONTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD135

Complementarylowvoltagetransistor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD135

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

BD135

NPNSILICONTRANSISTORS

NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance

SIEMENS

Siemens Ltd

BD135

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BD135

NPNSILICONTRANSISTORS

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD135

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc •BD135,137,139arecomplementarywithBD136,138,140

MotorolaMotorola, Inc

摩托罗拉

BD135

NPNpowertransistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BD135

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium−powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable •DCCurrentGain−hFE=40(Min)@

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BD135

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD136/138/140 APPLICATIONS •Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD135

PowerTransistorsNPNSilicon45,60,80Volts

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=150mAdc •ComplementarywithBD136,BD138,BD140

MCCMicro Commercial Components

美微科美微科半导体公司

BD135

NPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORBD135,BD137,andBD139areNPNSiliconEpitaxialPlanarTransistorsdesignedforaudioamplifierandswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

BD135

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCurrent ●ComplementToBD136,BD138AndBD140

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

BD135

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ◾HighCurrent(1.5A) ◾LowVoltage(80V)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

BD135

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

详细参数

  • 型号:

    HCNW135-XXXE

  • 制造商:

    AGILENT

  • 制造商全称:

    AGILENT

  • 功能描述:

    Single Channel, High Speed Optocouplers

供应商型号品牌批号封装库存备注价格
AVAGO/安华高
21+
S
5000
原装现货/假一赔十/支持第三方检验
询价
AVAGO
2017+
DIP-8
35689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
AVAGO
23+
DIP-8
7800
全新原装正品,现货销售
询价
HEWLETT
04+
2000
询价
AVAGO
DIP8
1000
原装长期供货!
询价
AGILENT
02+
SOP-8P
1187
现货
询价
AGILENT
1318+
进口原装
23568
优势现货可17%税
询价
AGILENT
23+
CAN8
18000
询价
AGILENT
16+
DIP
1068
原装现货假一罚十
询价
agilent
23+
SOP8
7720
绝对现货库存
询价
更多HCNW135-XXXE供应商 更新时间2024-5-17 16:52:00