原边控制

HCWSEMI

恒成微

原边控制

HCWSEMI

恒成微

原边控制

HCWSEMI

恒成微

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power sup

文件：47.21 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

文件：101.36 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters

文件：22.79 Kbytes 页数：2 Pages

NTE