IIRFR540Z

N-ChannelMOSFETTransistor

IIRL540N

N-ChannelMOSFETTransistor

•DESCRITION •Itisintendedforgeneralpurposeswitchingapplications •FEATURES •Lowdrain-sourceon-resistance: RDS(on)≤44mΩ(max) •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoper

IIRL540N

iscN-ChannelMOSFETTransistor

IK-540A

ToshibaIK-540ACamera

Forhigh-resolutionimaginginchallenginglightingconditions,thereisonlyonechoice:TheToshibaIK-540A. Thisamazingcameradeliverstheabsolutebestimagingperformanceinlowlight.Howgood?ItisdocumentedtobeuptoTENTIMESaspowerfulinlowlightthanconventionalmonochromeca

IQXO-540

CrystalClockOscillatorSpecification

IQXO-540-AUTO

CrystalClockOscillatorSpecification

IRC540

PowerMOSFET(Vdss=100V,Rds(on)=0.077ohm,Id=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077Ohm

IRC540PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.077廓,ID=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077OhmLead-Free

IRF540

N-ChannelPowerMOSFETs,27A,60-100V

IRF540

N-channelTrenchMOStransistor

VDSS=100V ID=23A RDS(ON)≤77mΩ GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Lowthermalresistance Applications:- •d.c.t