Silicon P Channel Power MOS FET High Speed Power Switching

Features • For Automotive Application (at Type Code J) • Low on-resistance • Capable of 4 V gate drive • High density mounting

文件：101.78 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P Channel Power MOS FET High Speed Power Switching

文件：232.29 Kbytes 页数：8 Pages

RENESAS

瑞萨

SiC N-Channel MOSFET

FEATURES ·Drain Current -ID= 79A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 42mΩ(Max)@VGS= 20V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

文件：420.31 Kbytes 页数：4 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : VCEO=-100V. • Low Collector-Emitter Saturation Voltage. : V CE(sat)=-2.0V(Max.) • Complementary to KTC2018.

文件：278.08 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

PNP Transistors

文件：1.13408 Mbytes 页数：2 Pages

KEXIN

科信电子