60V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：896.21 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

200V SGT N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：646.53 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

80V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：868.63 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

80V SGT N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Managment • Load Switch

文件：906.6 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

PNP SILICON TRANSISTOR

APPLICATIONS Low frequency power amplifier Applications.

文件：23.8 Kbytes 页数：1 Pages

HUASHAN

华汕电子器件

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit

文件：45.67 Kbytes 页数：4 Pages

HSMC

华昕

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit

文件：44.8 Kbytes 页数：4 Pages

HSMC

华昕

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit

文件：45.67 Kbytes 页数：4 Pages

HSMC

华昕

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit

文件：44.8 Kbytes 页数：4 Pages

HSMC

华昕

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

文件：108.27 Kbytes 页数：4 Pages

MCC