150V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：659.2 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

N-Channel Enhancement Mode Power MOSFET

文件：524.34 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：371.93 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast

文件：55.77 Kbytes 页数：2 Pages

IXYS

艾赛斯