丝印：H45N10D；Package：TO-252；N-Channel Power MOSFET

Features ·Low RDS(ON) & FOM ·Extremely low switching loss ·Excellent reliability and uniformity ·Fast switching and soft recovery Applications: ·PD charger ·Motor driver ·Switching voltage regulator ·DC-DC convertor ·Switching mode power supply

文件：490.99 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fas

文件：155.55 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.028 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ LOW LEAKAGE CURRENT ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE I2

文件：87.55 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR

N-CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI Power MOS Transistor ■ TYPICAL RDS(on) = 0.027 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARAC

文件：431.58 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体