NTH4L028N170M1

Marking：H4L028N170M1；Package：TO247-4L；Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm

Features •Typ.RDS(on)=28m@VGS=20V •UltraLowGateCharge(QG(tot)=200nC) •HighSpeedSwitchingwithLowCapacitance(Coss=200pF) •100AvalancheTested •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •UPS •DC/DCConverter •BoostConverter

NTH4L030N120M3S

Marking：H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=29m@VGS=18V •UltraLowGateCharge(QG(tot)=107nC) •HighSpeedSwitchingwithLowCapacitance(Coss=106pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

NTH4L070N120M3S

Marking：H4L070120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=65m@VGS=18V •UltraLowGateCharge(QG(tot)=57nC) •HighSpeedSwitchingwithLowCapacitance(Coss=57pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalA

NVH4L018N075SC1

Marking：H4L018N075SC；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 750 V, 13.5 m, 140 A

Features •Typ.RDS(on)=13.5m@VGS=18VTyp.RDS(on)=18m@VGS=15V •UltraLowGateCharge(QG(tot)=262nC) •HighSpeedSwitchingwithLowCapacitance(Coss=365pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable TypicalApplications •AutomotiveOnBoardC

NVH4L022N120M3S

Marking：H4L022120m3s；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A

Features •Typ.RDS(on)=22m@VGS=18V •UltraLowGateCharge(QG(tot)=151nC) •HighSpeedSwitchingwithLowCapacitance(Coss=244pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •TheseDevicesareRoHSCompliant TypicalApplications •AutomotiveOnBoardC

NVH4L030N120M3S

Marking：H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=29m@VGS=18V •UltraLowGateCharge(QG(tot)=107nC) •HighSpeedSwitchingwithLowCapacitance(Coss=106pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(on

NVH4L045N065SC1

Marking：H4L045065SC1；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 33 m, 55 A

Features •Typ.RDS(on)=33m@VGS=18VTyp.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •HighSpeedSwitchingwithLowCapacitance(Coss=162pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisPb−FreeandisRoHSCompliant

NVH4L070N120M3S

Marking：H4L070120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=65m@VGS=18V •UltraLowGateCharge(QG(tot)=57nC) •HighSpeedSwitchingwithLowCapacitance(Coss=57pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(ons

RT9013-30GQW

Marking：H4*；Package：WDFN-62x2；500mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator

GeneralDescription TheRT9013isahigh-performance,500mALDOregulator,offeringextremelyhighPSRRandultra-lowdropout.IdealforportableRFandwirelessapplicationswithdemandingperformanceandspacerequirements. Features WideOperatingVoltageRanges:2.2Vto5.5V Low

SN74AUP2G241DCUR

Marking：H41R；Package：VSSOP；LOW-POWER DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

1FEATURES •AvailableintheTexasInstrumentsNanoStar™ Package •LowStatic-PowerConsumption (ICC=0.9mAMaximum) •LowDynamic-PowerConsumption (Cpd=4.2pFTypat3.3V) •LowInputCapacitance(Ci=1.5pFTypical) •LowNoise–OvershootandUndershoot