NPN EPITAXIAL PLANAR TRANSISTOR

Description Darlington Transistor

文件：35.2 Kbytes 页数：3 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

HSMC

华昕

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

文件：93.89 Kbytes 页数：2 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC(max) = 625mW

文件：67.95 Kbytes 页数：2 Pages

Samsung

三星

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • General purpose • High gain amplification.

文件：49.12 Kbytes 页数：8 Pages

PHI

飞利浦