丝印：H25N60F；Package：TO-220F；Super Junction N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC-DC Switching Power Supply

文件：383.17 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

600V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

文件：1.18609 Mbytes 页数：7 Pages

HUIXIN

慧芯电子

TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：236.99 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N?묬hannel Power MOSFET

文件：197.25 Kbytes 页数：8 Pages

ONSEMI

安森美半导体