丝印：H25N60P；Package：TO-3P；600V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

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TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

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摩托罗拉

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Triac

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