型号：IMH23；Package：SOT-26；Dual digital transistors

Features 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low saturation voltage, typically VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 4) These transistors can be used at high current levels, IC=600mA. 5) Built-in bias resis

文件：64.42 Kbytes 页数：3 Pages

ROHM

罗姆

型号：IMH23；Package：SOT-26；Dual digital transistors

Features 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low saturation voltage, typically VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 4) These transistors can be used at high current levels, IC=600mA. 5) Built-in bias resis

文件：57.54 Kbytes 页数：3 Pages

ROHM

罗姆

型号：US6H23；Package：TUMT6；Dual digital transistors

Features 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low saturation voltage, typically VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 4) These transistors can be used at high current levels, IC=600mA. 5) Built-in bias resis

文件：101.63 Kbytes 页数：4 Pages

ROHM

罗姆

型号：MBRX230H；Package：SOD-123FL；Schottky Barrier Rectifiers

文件：498.9 Kbytes 页数：4 Pages

BILIN

银河微电

型号：MBRXFH230；Package：SOD-123F；Schottky Barrier Rectifiers

文件：461.88 Kbytes 页数：4 Pages

BILIN

银河微电

型号：SN65HVD230MDREP；Package：SOIC；3.3-V CAN TRANSCEIVERS

FEATURES Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Operates With a 3.3-V Supply Low Power Rep

文件：651.34 Kbytes 页数：32 Pages

TI2

德州仪器

型号：SN65HVD230MDREP.A；Package：SOIC；3.3-V CAN TRANSCEIVERS

FEATURES Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Operates With a 3.3-V Supply Low Power Rep

文件：651.34 Kbytes 页数：32 Pages

TI2

德州仪器

型号：SN65HVD233MDREP；Package：SOIC；3.3-V CAN TRANSCEIVER

FEATURES · Bus-Pin Fault Protection Exceeds ±36 V · Bus-Pin ESD Protection Exceeds 16-kV HBM · Compatible With ISO 11898 · Signaling Rates(1) up to 1 Mbps · Extended –7-V to 12-V Common-Mode Range · High-Input Impedance Allows for 120 Nodes · LVTTL I/Os Are 5-V Tolerant · Adjustable Driver

文件：672.78 Kbytes 页数：29 Pages

TI2

德州仪器

型号：SN65HVD233MDREP.A；Package：SOIC；3.3-V CAN TRANSCEIVER

FEATURES · Bus-Pin Fault Protection Exceeds ±36 V · Bus-Pin ESD Protection Exceeds 16-kV HBM · Compatible With ISO 11898 · Signaling Rates(1) up to 1 Mbps · Extended –7-V to 12-V Common-Mode Range · High-Input Impedance Allows for 120 Nodes · LVTTL I/Os Are 5-V Tolerant · Adjustable Driver

文件：672.78 Kbytes 页数：29 Pages

TI2

德州仪器

型号：V62/06629-01XE；Package：SOIC；3.3-V CAN TRANSCEIVERS

FEATURES Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Operates With a 3.3-V Supply Low Power Rep

文件：651.34 Kbytes 页数：32 Pages

TI2

德州仪器