丝印：H18；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ211, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ211 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators

文件：470.67 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：H18N65AF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON≤0.55Ω @Vgs=10V, Id=9A Low gate Charge(typical 52nC) Low Crss (typical 1.9pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) (PFC) C

文件：2.19979 Mbytes 页数：9 Pages

SY

顺烨电子

丝印：H18N65ANB；Package：TO-263；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=9A Low gate Charge(typical 52nC) Low Crss (typical 1.9pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.86126 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H18N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=9A Low gate Charge(typical 52nC) Low Crss (typical 1.9pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.86126 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H18N65ANFT；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=9A Low gate Charge(typical 52nC) Low Crss (typical 1.9pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.86126 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H18N65ANP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=9A Low gate Charge(typical 52nC) Low Crss (typical 1.9pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.86126 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H18N65ANV；Package：TO-3P；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=9A Low gate Charge(typical 52nC) Low Crss (typical 1.9pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.86126 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H18N65ANW；Package：TO-247；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=9A Low gate Charge(typical 52nC) Low Crss (typical 1.9pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.86126 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H18N65AP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON≤0.55Ω @Vgs=10V, Id=9A Low gate Charge(typical 52nC) Low Crss (typical 1.9pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) (PFC) C

文件：2.19979 Mbytes 页数：9 Pages

SY

顺烨电子

丝印：H18B**；Package：SOT-563；3-MODE 150mA LDO REGULATOR

文件：843.5 Kbytes 页数：31 Pages

Ricoh

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