丝印：H03；Package：SOT-346；Digital transistors (built-in resistor)

文件：63.14 Kbytes 页数：3 Pages

ROHM

罗姆

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

文件：59.56 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

文件：59.56 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

文件：59.56 Kbytes 页数：5 Pages

HSMC

华昕

1W,Isolated 6000VDC Unregulated Single&Dual Output DC/DC Converters

文件：603.76 Kbytes 页数：4 Pages

MICRODC

泰辰电气

1W,Isolated 6000VDC Unregulated Single&Dual Output DC/DC Converters

文件：605.7 Kbytes 页数：4 Pages

MICRODC

泰辰电气

Isolated 1W Single&Dual Output DC/DC Converters

文件：857.45 Kbytes 页数：4 Pages

MICRODC

泰辰电气

Reinforced insulation

文件：1.25202 Mbytes 页数：5 Pages

MORNSUN

金升阳

Reinforced insulation

文件：1.24114 Mbytes 页数：5 Pages

MORNSUN

金升阳

3 Lead (0.100횞 Diameter P.C.) TO-46 Metal Can Package

文件：59.25 Kbytes 页数：1 Pages

NSCNational Semiconductor (TI)

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