33 A - 1300 V - very fast IGBT

Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features ■ Low saturation v

文件：822.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

33 A - 1300 V - very fast IGBT

Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features ■ Low saturation v

文件：822.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

33 A - 1300 V - very fast IGBT

Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features ■ Low saturation v

文件：822.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

33 A - 1300 V - very fast IGBT

Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features ■ Low saturation v

文件：822.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体