64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

文件：162.09 Kbytes 页数：13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

文件：162.09 Kbytes 页数：13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

文件：162.09 Kbytes 页数：13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

文件：162.09 Kbytes 页数：13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

文件：165.45 Kbytes 页数：12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

文件：165.45 Kbytes 页数：12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

文件：165.45 Kbytes 页数：12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

文件：165.45 Kbytes 页数：12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

文件：165.45 Kbytes 页数：12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K X 18 Synchronous Burst SRAM

Infineon

英飞凌