首页 >GVT7164C18>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GVT7164C18 | 64K x 18 Synchronous Burst RAM Pipelined Output Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7, 文件:165.45 Kbytes 页数:12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | CYPRESS | |
GVT7164C18 | 64K x 18 Synchronous Burst RAM Pipelined Output | Infineon 英飞凌 | Infineon | |
64K x 18 Synchronous Burst RAM Pipelined Output Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7, 文件:165.45 Kbytes 页数:12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | CYPRESS | ||
64K x 18 Synchronous Burst RAM Pipelined Output Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7, 文件:165.45 Kbytes 页数:12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | CYPRESS | ||
64K x 18 Synchronous Burst RAM Pipelined Output Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7, 文件:165.45 Kbytes 页数:12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | CYPRESS | ||
64K x 18 Synchronous Burst RAM Pipelined Output Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7, 文件:165.45 Kbytes 页数:12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | CYPRESS |
详细参数
- 型号:
GVT7164C18
- 制造商:
CYPRESS
- 制造商全称:
Cypress Semiconductor
- 功能描述:
64K x 18 Synchronous Burst RAM Pipelined Output
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
QFP |
24 |
询价 | ||||
GALVANTEC |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
询价 | ||
GALVANTECH |
24+ |
QFP |
32 |
大批量供应优势库存热卖 |
询价 | ||
GALVA |
23+ |
QFP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
GALVANTECH |
24+ |
QFP100 |
9630 |
我们只做原装正品现货!量大价优! |
询价 | ||
25+ |
O-NEWQ |
541 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | |||
GALVANTECH |
23+ |
SOP.8 |
5000 |
原装正品,假一罚十 |
询价 | ||
GALVANTECH |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
24+ |
QFP |
5000 |
全现原装公司现货 |
询价 | |||
GALVANTECH |
1997 |
QFP |
81 |
原装现货海量库存欢迎咨询 |
询价 |
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