首页 >GVT71256T18>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GVT71256T18 | 256K x 18 Synchronous-Pipelined Cache Tag RAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8, 文件:237.24 Kbytes 页数:24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | CYPRESS | |
GVT71256T18 | 256K x 18 Synchronous-Pipelined Cache Tag RAM | Infineon 英飞凌 | Infineon | |
256K x 18 Synchronous-Pipelined Cache Tag RAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8, 文件:237.24 Kbytes 页数:24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | CYPRESS | ||
256K x 18 Synchronous-Pipelined Cache Tag RAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8, 文件:237.24 Kbytes 页数:24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | CYPRESS | ||
256K x 18 Synchronous-Pipelined Cache Tag RAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8, 文件:237.24 Kbytes 页数:24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | CYPRESS | ||
256K x 18 Synchronous-Pipelined Cache Tag RAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8, 文件:237.24 Kbytes 页数:24 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | CYPRESS |
详细参数
- 型号:
GVT71256T18
- 制造商:
CYPRESS
- 制造商全称:
Cypress Semiconductor
- 功能描述:
256K x 18 Synchronous-Pipelined Cache Tag RAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GAL |
24+/25+ |
1400 |
原装正品现货库存价优 |
询价 | |||
GALVANTECH |
06+ |
原厂原装 |
4916 |
只做全新原装真实现货供应 |
询价 | ||
GAL |
2015+ |
SMD/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
GALVANTEC |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
GALVANTECH |
2023+ |
SMD |
1399 |
安罗世纪电子只做原装正品货 |
询价 | ||
GALVANTE |
24+ |
QFP |
5 |
询价 | |||
GALVANTE |
17+ |
QFP |
12000 |
全新原装现货QQ:547425301手机17621633780杨小姐 |
询价 | ||
CYPRESS |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
GALVANTE |
23+ |
QFP |
12000 |
全新原装假一赔十 |
询价 | ||
GALVANTECH |
24+ |
QFP |
3000 |
全新原装现货 优势库存 |
询价 |
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