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GVT71256T18

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件:237.24 Kbytes 页数:24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256T18

256K x 18 Synchronous-Pipelined Cache Tag RAM

Infineon

英飞凌

GVT71256T18T-10

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件:237.24 Kbytes 页数:24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256T18T-6

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件:237.24 Kbytes 页数:24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256T18T-67

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件:237.24 Kbytes 页数:24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256T18T-75

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件:237.24 Kbytes 页数:24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

详细参数

  • 型号:

    GVT71256T18

  • 制造商:

    CYPRESS

  • 制造商全称:

    Cypress Semiconductor

  • 功能描述:

    256K x 18 Synchronous-Pipelined Cache Tag RAM

供应商型号品牌批号封装库存备注价格
GAL
24+/25+
1400
原装正品现货库存价优
询价
GALVANTECH
06+
原厂原装
4916
只做全新原装真实现货供应
询价
GAL
2015+
SMD/DIP
19889
一级代理原装现货,特价热卖!
询价
GALVANTEC
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
GALVANTECH
2023+
SMD
1399
安罗世纪电子只做原装正品货
询价
GALVANTE
24+
QFP
5
询价
GALVANTE
17+
QFP
12000
全新原装现货QQ:547425301手机17621633780杨小姐
询价
CYPRESS
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
GALVANTE
23+
QFP
12000
全新原装假一赔十
询价
GALVANTECH
24+
QFP
3000
全新原装现货 优势库存
询价
更多GVT71256T18供应商 更新时间2026-2-2 14:35:00