GVT71256T18T-6中文资料赛普拉斯数据手册PDF规格书

Functional Description

The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.

Features

• Fast match times: 3.5, 3.8, 4.0 and 4.5 ns

• Fast clock speed: 166, 150, 133, and 100 MHz

• Fast OE access times: 3.5, 3.8, 4.0 and 5.0 ns

• Pipelined data comparator

• Data input register load control by DEN

• Optimal for depth expansion (one cycle chip deselect to eliminate bus contention)

• 3.3V –5 and +10 core power supply

• 2.5V or 3.3V I/O supply

• 5V tolerant inputs except I/Os

• Clamp diodes to VSS at all inputs and outputs

• Common data inputs and data outputs

• JTAG boundary scan

• Byte Write Enable and Global Write control

• Three chip enables for depth expansion and address pipeline

• Address, data, and control registers

• Internally self-timed Write Cycle

• Burst control pins (interleaved or linear burst sequence)

• Automatic power-down for portable applications

• Low-profile JEDEC standard 100-pin TQFP package