MTSF2P03HD

SINGLETMOSPOWERMOSFET2.7AMPERES30VOLTSRDS(on)=0.090OHM

MediumPowerSurfaceMountProducts TMOSSingleP-ChannelFieldEffectTransistor Micro8™devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocesstoachievelowestpossibleon–resistancepersiliconarea.Theyarecapableofwithstandinghighene

RFT2P03L

2.1A,30V,0.150Ohm,P-ChannelLogicLevel,PowerMOSFET

ThisproductisaP-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulator

RT2P03M

COMPOSITETRANSISTORWITHRESISTORFORSWITCHINGAPPLICATIONSILICONPNPEPITAXIALTYPE

DESCRIPTION RT2P03Misacompositetransistorwithbuilt-inbiasresistor FEATURE ●Built-inbiasresistor(R1=10KΩ,R2=10KΩ) ●Minipackageforeasymounting APPLICATION Invertedcircuit,switchingcircuit,interfacecircuit,drivercircuit

SDT2P03-C

Dual-PEnhancementModeMOSFET