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GTRA362002FC-V1数据手册MACOM中文资料规格书
GTRA362002FC-V1规格书详情
描述 Description
The GTRA362002FC is a 200-watt (P3dB) GaN-on=SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
特性 Features
·Asymmetrical Doherty design: Main P3dB 85 W Typ; Peak P3dB 115 W Typ
·Typical Pulsed CW performance; 3500 MHz; 48 V; combined outputs
·Output power at P3dB 200 W
·Efficiency 60%
·Gain 12.5 dB
·Capable of handling 10:1 VSWR @50 V; 30 W (CW) output power
·Low thermal resistance
·Pb-free and RoHS complian
·Input matched
应用 Application
·Multi-standard Cellular Power Amplifiers
技术参数
- 制造商编号
:GTRA362002FC-V1
- 生产厂家
:MACOM
- Min Frequency (MHz)
:3300
- Max Frequency(MHz)
:3900
- P3dB Output Power(W)
:200
- Gain(dB)
:13.5
- Efficiency(%)
:42
- Operating Voltage(V)
:48
- Package Category
:Earless
- Form
:Packaged Discrete Transistor
- Technology
:GaN-on-SiC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
WOLFSPEED |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
LUMEX |
05+ |
原厂原装 |
4320 |
只做全新原装真实现货供应 |
询价 | ||
MACOM Technology Solutions |
25+ |
- |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
23+ |
22757 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||||
WOLFSPEED |
24+ |
N/A |
34388 |
原装原装原装 |
询价 | ||
WOLFSPEED |
25+ |
30000 |
原装现货,支持实单 |
询价 | |||
G-Switch/品赞 |
25+ |
DIP |
2500 |
国产替换现货降本 |
询价 | ||
CREE/科锐 |
24+ |
SMD |
60000 |
全新原装现货 |
询价 | ||
Lumex |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |