13-bit GTL to LVTTL translator with power good control

General description The GTL2007 is a customized translator between dual Xeon processors, Platform Health Management, South Bridge and Power Supply LVTTL and GTL signals. Features ■ Operates as a GTL to LVTTL sampling receiver or LVTTL to GTL driver ■ 3.0 V to 3.6 V operation ■ LVTTL I/O not 5

文件：98.92 Kbytes 页数：19 Pages

PHI

飞利浦

12-bit GTL to LVTTL translator with power good control

General description The GTL2007 is a customized translator between dual Xeon processors, Platform Health Management, South Bridge and Power Supply LVTTL and GTL signals. Features ■ Operates as a GTL to LVTTL sampling receiver or LVTTL to GTL driver ■ Operates at GTL−/GTL/GTL+ signal levels ■

文件：120.22 Kbytes 页数：20 Pages

恩XP

带有良好电源控制的12位GTL至LVTTL变换器

GTL2007是一款用在双Xeon处理器、平台健康管理、南桥以及电源LVTTL和GTL信号之间的自定义变换器。\nGTL2007是从GTL2006演变而来，添加了使能功能，以便取消向平台监视代理输出错误，该代理会监视各处理器的每一个错误状态。可使用此使能功能使系统意外断电时的伪错误状态不会传至监视代理。这类意外断电可能源于电源过载、CPU热脱扣或监视代理不能察觉的其他事件。\n典型措施是将各使能线路连接至系统电源良好信号，或将各使能线连接至各处理器的VRD电源良好信号。\n典型Xeon处理器指定1.1 V至1.2 V的VTT以及0.73 V至0.76 V的标称Vref。为允许将来可能使Vref 用作GTL至LVTTL采样接收器或LVTTL至GTL驱动器\n工作于GTL-/GTL/GTL+信号电平\nEN1和EN2禁用错误输出\n3.0 V至3.6 V操作\nLVTTL I/O无5 V耐受\nLVTTL输出上串联30 Ω的终端电阻\nESD保护：按JESD22-A114超过2000 V HBM，按JESD22-A115超过200 V MM，按JESD22-C101超过1000 V CDM\n已按照JEDEC标准JESD78完成闭锁测试，超过500 mA\n提供封装：TSSOP28;

恩XP

恩智浦

Silicon N Channel MOS FET Series Power Switching

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt

文件：42.9 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOSFET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o

文件：95.12 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET Series Power Switching

文件：114.66 Kbytes 页数：11 Pages

RENESAS

瑞萨